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Composition-spread Growth and the Robust Topological Surface State of Kondo insulator SmB6 Thin Films

机译:组分扩散生长与鲁棒拓扑表面态   Kondo绝缘体smB6薄膜

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摘要

Topological insulators are a class of materials with insulating bulk butprotected conducting surfaces due to the combination of spin-orbit interactionsand time-reversal symmetry. The surface states are topologically non-trivialand robust against non-magnetic backscattering, leading to interesting physicsand potential quantum computing applications1, 2. Recently there has been afast growing interest in samarium hexboride (SmB6), a Kondo insulator predictedto be the first example of a correlated topological insulator3, 4. Here wefabricated smooth thin films of nanocrystalline SmB6 films. Their transportbehavior indeed shows that SmB6 is a bulk insulator with topological surfacestates. Upon decreasing the temperature, the resistivity \r{ho} of Sm0.14B0.86(SmB6) films display significant increase below 50 K due to hybridization gapformation, and it shows a saturation behavior below 10 K. The saturatedresistance of our textured films is similar to that of the single crystals,suggesting that this conduction is from the surface and robust against grainboundary scatterings. Point contact spectroscopy (PCS) of the film using asuperconducting tip displays both a Kondo Fano resonance and Andreevreflection, suggesting the existence of both an insulating Kondo lattice andmetallic surface states.
机译:拓扑绝缘体是一类具有绝缘体但由于自旋轨道相互作用和时间反转对称性的结合而受保护的导电表面的材料。表面状态在拓扑学上对非磁性反向散射不敏感,从而导致了有趣的物理学和潜在的量子计算应用1、2。最近,人们对六硼化sa(SmB6)的兴趣迅速增长,六硼化sa被认为是Kondo绝缘子的第一个例子。相关的拓扑绝缘体3,4。在这里,我们制作了纳米晶SmB6薄膜的光滑薄膜。它们的传输行为确实表明SmB6是具有拓扑表面状态的整体绝缘体。随着温度的降低,由于杂化间隙的形成,Sm0.14B0.86(SmB6)膜的电阻率\ r {ho}显示出在50 K以下的显着增加,并且在10 K以下显示了饱和行为。我们的纹理膜的饱和电阻为与单晶相似,表明这种传导来自表面并且对晶界散射具有较强的抵抗力。使用超导尖端的薄膜点接触光谱法(PCS)既显示近藤Fano共振又显示Andreevreflection,表明存在绝缘的近藤晶格和金属表面态。

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